Silicon‐Based Intermediate‐Band Infrared Photodetector Realized by Te Hyperdoping

Adv. Opt. Mater. 2021, 18, 2001546 DOI: 10.1002/adom.202001546 In the originally published article, specific detectivity data was inaccurately calculated based on assumption of an ideal diode, which is not always valid. The photodetector by Equation (6) page 5. term r0 represents dynamic resistance. It should be obtained from derivative (dI/dV)−1 experimental I–V data. improper calculation leads to over- or under-estimation at below above around 200 K (Figure 4). corrected detectivities are now provided here, along with a short explanation changes that have been made. authors confirm these do affect conclusions article. abstract manuscript, next-to-last sentence read: correlation between background noise and sensitivity Te-hyperdoped Si photodiode, where maximum room-temperature found 1.1 × 109 cm Hz1/2 W−1 3.0 107 1.2 µm 1.55 µm, respectively. On 3 in right-hand column, sentences reverse bias region, dark current increases factor 106 20 300 K. A zero-bias artifact observed low-temperature curves shown Figure 2(b), could capacitive effect occurring junction contact region. order shed light transport mechanism Si/p-Si junction, we fitted steep part forward (3). 5 Rph responsivity units A/W photosensitive area (0.082 cm2) detector. resistance D* achieved (see 4(a)), one magnitude smaller than biased Ag-hyperdoped photodetectors.[21] Importantly, 1 only ten-times lower commercial Photodiode (i.e. FDS1010). related sub-bandgap photoresponse range 104–1011 W–1, 3−4 orders larger Ti-supersaturated photodetector.[19] 6 left-hand Notably, wavelength 1.0–1.9 this prototype approaches PbSe detector it 2–3 Ge three photodiode FDG03). 7 photodiodes demonstrated exhibit spanning broad temperature (20–300 K), 1.6 1011 W–1 (1.2 K) has achieved. Table Contents figure 4 presented below. sincerely apologize for any inconvenience caused. figure.